MC-200 Climb to the 200 mm step
The Annealsys MC-200 is a 200 mm DLI-CVD/ALD system for R&D.
Capacitance plasma version is available.
Capacitance plasma version is available.
Other Annealsys DLI-CVD / DLI-ALD products
Download MC-200 PDF datasheet
The MC-200 is a versatile deposition system that can perform metal organic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD) inside the same process chamber.
- Simple and multi-metallic oxides
- Metals, nitrides and alloys
- III-V, wide band gap semiconductors
- 2D and 3D materials
- Etc.
For air sensitive applications the MC-200 can receive a motorized single wafer loadlock to isolate the process chamber from atmosphere.
The Annealsys MC-200 is a 200 mm thermally controlled wall CVD reactor specially developed to meet the requirements of research and development units for MOCVD processes.
The Direct Liquid Injection (DLI) vaporizers provide perfect control of precursor flow and allow utilization of low vapor pressure and diluted chemical precursors. The fast switching of the precursor vapor flows associated with the by-pass valve provide perfect interface control for deposition of nanolaminates.
A capacitance plasma option offers PE-CVD and PE-ALD capabilities for reducing the deposition temperature.
The system is made of several elements assembled using flanges. It makes it very versatile, easy to clean and easily modifiable for custom applications.
The simple shower head and reactor design makes it suitable for using low vapor and thermally unstable chemical precursors.
- Temperature range: RT to 800°C
- Up to 4 vaporizers
- Gas mixing capability with mass flow controllers
- Vacuum range: Atmosphere to 10-3 Torr
The MC-200 can be equipped with capacitance plasma substrate holder for PE-CVD and PE-ALD processes.
- Capacitance plasma
- Rough vacuum pump, Turbo pump
- Motorized vacuum loadlock loading
- ALD kit for water vapor delivery